Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy

Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy

10.1109/LED.2007.895404

Saved in:
Bibliographic Details
Main Authors: Yu, X., Huang, J., Yu, M., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Conducting atomic force microscopy (C-AFM)
Gate doping concentration
High-κ gate dielectric
Leakage current
Leakage path
Poly-Si gate
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82198
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1109/LED.2007.895404

Similar Items