EXPERIMENTAL STUDY OF HIGH GATE TO DRAIN LEAKAGE CURRENT IN 0.18μm CMOS TECHNOLOGY

Master's

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Bibliographic Details
Main Author: CHANDRASEKAR VENKATARAMANI
Other Authors: SINGAPORE-MIT ALLIANCE
Format: Theses and Dissertations
Published: 2019
Subjects:
Online Access:https://scholarbank.nus.edu.sg/handle/10635/154027
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Institution: National University of Singapore