EXPERIMENTAL STUDY OF HIGH GATE TO DRAIN LEAKAGE CURRENT IN 0.18μm CMOS TECHNOLOGY

Master's

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Bibliographic Details
Main Author:	CHANDRASEKAR VENKATARAMANI
Other Authors:	SINGAPORE-MIT ALLIANCE
Format:	Theses and Dissertations
Published:	2019
Subjects:	Salicide Bridging gate to drain leakage gate oxide defects Leakage current
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/154027
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-154027
record_format	dspace
spelling	sg-nus-scholar.10635-1540272019-05-10T13:16:14Z EXPERIMENTAL STUDY OF HIGH GATE TO DRAIN LEAKAGE CURRENT IN 0.18μm CMOS TECHNOLOGY CHANDRASEKAR VENKATARAMANI SINGAPORE-MIT ALLIANCE WONG CHEE CHEONG SHAO HUA Salicide Bridging gate to drain leakage gate oxide defects Leakage current Master's MASTER OF SCIENCE 2019-05-10T07:27:42Z 2019-05-10T07:27:42Z 2003 Thesis CHANDRASEKAR VENKATARAMANI (2003). EXPERIMENTAL STUDY OF HIGH GATE TO DRAIN LEAKAGE CURRENT IN 0.18μm CMOS TECHNOLOGY. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/154027 SMA BATCHLOAD 20190422
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	Salicide Bridging gate to drain leakage gate oxide defects Leakage current
spellingShingle	Salicide Bridging gate to drain leakage gate oxide defects Leakage current CHANDRASEKAR VENKATARAMANI EXPERIMENTAL STUDY OF HIGH GATE TO DRAIN LEAKAGE CURRENT IN 0.18μm CMOS TECHNOLOGY
description	Master's
author2	SINGAPORE-MIT ALLIANCE
author_facet	SINGAPORE-MIT ALLIANCE CHANDRASEKAR VENKATARAMANI
format	Theses and Dissertations
author	CHANDRASEKAR VENKATARAMANI
author_sort	CHANDRASEKAR VENKATARAMANI
title	EXPERIMENTAL STUDY OF HIGH GATE TO DRAIN LEAKAGE CURRENT IN 0.18μm CMOS TECHNOLOGY
title_short	EXPERIMENTAL STUDY OF HIGH GATE TO DRAIN LEAKAGE CURRENT IN 0.18μm CMOS TECHNOLOGY
title_full	EXPERIMENTAL STUDY OF HIGH GATE TO DRAIN LEAKAGE CURRENT IN 0.18μm CMOS TECHNOLOGY
title_fullStr	EXPERIMENTAL STUDY OF HIGH GATE TO DRAIN LEAKAGE CURRENT IN 0.18μm CMOS TECHNOLOGY
title_full_unstemmed	EXPERIMENTAL STUDY OF HIGH GATE TO DRAIN LEAKAGE CURRENT IN 0.18μm CMOS TECHNOLOGY
title_sort	experimental study of high gate to drain leakage current in 0.18μm cmos technology
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/154027
_version_	1681099327492063232

EXPERIMENTAL STUDY OF HIGH GATE TO DRAIN LEAKAGE CURRENT IN 0.18μm CMOS TECHNOLOGY

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