Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs

• Main Authors: Dutta, Pradipta, Syamal, Binit, Koley, Kalyan, Dutta, Arka, Sarkar, C. K.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Asymmetric Double Gate; Drain Current
• Online Access: https://hdl.handle.net/10356/89322; http://hdl.handle.net/10220/44866
• Institution: Nanyang Technological University

The paper presents a drain current model for double gate metal oxide semiconductor field effect transistors (DG MOSFETs) based on a new velocity saturation model that accounts for short-channel velocity saturation effect independently in the front and the back gate controlled channels under asymmetr...