Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

• المؤلفون الرئيسيون: Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Liu, Zhi Hong, Ranjan, Kumud, Ang, Kian Siong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: Leakage currents; Temperature measurement
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/83338; http://hdl.handle.net/10220/42576
• المؤسسة: Nanyang Technological University

The gate leakage current mechanism of AlGaN/GaN Schottky barrier diodes (SBDs) and high-electron-mobility transistors (HEMTs) with sputtered TiN is systematically investigated. The reverse leakage current (JR) of TiN SBDs increases exponentially with the increase of reverse voltage (VR) from 0 to −3...