Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

The gate leakage current mechanism of AlGaN/GaN Schottky barrier diodes (SBDs) and high-electron-mobility transistors (HEMTs) with sputtered TiN is systematically investigated. The reverse leakage current (JR) of TiN SBDs increases exponentially with the increase of reverse voltage (VR) from 0 to −3...

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Bibliographic Details
Main Authors:	Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Liu, Zhi Hong, Ranjan, Kumud, Ang, Kian Siong
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2017
Subjects:	Leakage currents Temperature measurement
Online Access:	https://hdl.handle.net/10356/83338 http://hdl.handle.net/10220/42576
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

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