Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

• المؤلفون الرئيسيون: Murugapandiyan, P., Mohanbabu, A., Lakshmi, V. Rajya, Ramakrishnan, V.N., Varghese, Arathy, Wasim, MOHD, Baskaran, S., Kumar, R. Saravana, Janakiraman, V.
• التنسيق: مقال
• اللغة: English
• منشور في: H. : ĐHQGHN 2020
• الموضوعات: MOS-HEMT; HfO2; JFoM; Microwave applications; Cut-off frequency; Leakage current
• الوصول للمادة أونلاين: http://repository.vnu.edu.vn/handle/VNU_123/89314; https://doi.org/10.1016/j.jsamd.2020.04.007

We present a performance enhancement evaluation of n þ doped graded InGaN drain/source regionbased HfO2/InAlN/AlN/GaN/AlN on SiC metal-oxide-semiconductor high electron mobility transistor (MOS-HEMTs) with a T-shaped gate. Impact on the device characteristics with the inclusion of a HfO2 surface pas...