DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications

by Murugapandiyan, P., Ravimaran, S., William, J.
Published 2017

DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications

by Murugapandiyan, P., Ravimaran, S., William, J.
Published 2017

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

by Murugapandiyan, P., Mohanbabu, A., Lakshmi, V. Rajya, Ramakrishnan, V.N., Varghese, Arathy, Wasim, MOHD, Baskaran, S., Kumar, R. Saravana, Janakiraman, V.
Published 2020