AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

• Main Authors: Liu, X, Gu, H, Li, K, Guo, L, Zhu, D, Lu, Y, Wang, J, Kuo, H.-C, Liu, Z, Liu, W, Chen, L, Fang, J, Ang, K.-W, Xu, K, Ao, J.-P
• Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
• Format: Article
• Published: 2020
• Subjects: Electron mobility; Gallium nitride; Materials properties; Metallorganic chemical vapor deposition; Organic chemicals; Organometallics; Power semiconductor devices; A3. metal organic chemical vapor deposition (MOCVD); Algan/gan high electron-mobility transistors; Device characteristics; High-power device applications; High-quality materials; Subthreshold swing; Systematic study; Ultralow dislocation density; High electron mobility transistors
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/176083
• Institution: National University of Singapore

10.1063/1.4999810