AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

10.1063/1.4999810

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Main Authors:	Liu, X, Gu, H, Li, K, Guo, L, Zhu, D, Lu, Y, Wang, J, Kuo, H.-C, Liu, Z, Liu, W, Chen, L, Fang, J, Ang, K.-W, Xu, K, Ao, J.-P
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Published:	2020
Subjects:	Electron mobility Gallium nitride Materials properties Metallorganic chemical vapor deposition Organic chemicals Organometallics Power semiconductor devices A3. metal organic chemical vapor deposition (MOCVD) Algan/gan high electron-mobility transistors Device characteristics High-power device applications High-quality materials Subthreshold swing Systematic study Ultralow dislocation density High electron mobility transistors
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/176083
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-176083
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spelling	sg-nus-scholar.10635-1760832023-11-01T07:48:53Z AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer Liu, X Gu, H Li, K Guo, L Zhu, D Lu, Y Wang, J Kuo, H.-C Liu, Z Liu, W Chen, L Fang, J Ang, K.-W Xu, K Ao, J.-P DEPT OF ELECTRICAL & COMPUTER ENGG DIVISION OF BIOENGINEERING Electron mobility Gallium nitride Materials properties Metallorganic chemical vapor deposition Organic chemicals Organometallics Power semiconductor devices A3. metal organic chemical vapor deposition (MOCVD) Algan/gan high electron-mobility transistors Device characteristics High-power device applications High-quality materials Subthreshold swing Systematic study Ultralow dislocation density High electron mobility transistors 10.1063/1.4999810 AIP Advances 7 9 95305 2020-09-14T08:02:20Z 2020-09-14T08:02:20Z 2017 Article Liu, X, Gu, H, Li, K, Guo, L, Zhu, D, Lu, Y, Wang, J, Kuo, H.-C, Liu, Z, Liu, W, Chen, L, Fang, J, Ang, K.-W, Xu, K, Ao, J.-P (2017). AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer. AIP Advances 7 (9) : 95305. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4999810 2158-3226 https://scholarbank.nus.edu.sg/handle/10635/176083 Unpaywall 20200831
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Electron mobility Gallium nitride Materials properties Metallorganic chemical vapor deposition Organic chemicals Organometallics Power semiconductor devices A3. metal organic chemical vapor deposition (MOCVD) Algan/gan high electron-mobility transistors Device characteristics High-power device applications High-quality materials Subthreshold swing Systematic study Ultralow dislocation density High electron mobility transistors
spellingShingle	Electron mobility Gallium nitride Materials properties Metallorganic chemical vapor deposition Organic chemicals Organometallics Power semiconductor devices A3. metal organic chemical vapor deposition (MOCVD) Algan/gan high electron-mobility transistors Device characteristics High-power device applications High-quality materials Subthreshold swing Systematic study Ultralow dislocation density High electron mobility transistors Liu, X Gu, H Li, K Guo, L Zhu, D Lu, Y Wang, J Kuo, H.-C Liu, Z Liu, W Chen, L Fang, J Ang, K.-W Xu, K Ao, J.-P AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
description	10.1063/1.4999810
author2	DEPT OF ELECTRICAL & COMPUTER ENGG
author_facet	DEPT OF ELECTRICAL & COMPUTER ENGG Liu, X Gu, H Li, K Guo, L Zhu, D Lu, Y Wang, J Kuo, H.-C Liu, Z Liu, W Chen, L Fang, J Ang, K.-W Xu, K Ao, J.-P
format	Article
author	Liu, X Gu, H Li, K Guo, L Zhu, D Lu, Y Wang, J Kuo, H.-C Liu, Z Liu, W Chen, L Fang, J Ang, K.-W Xu, K Ao, J.-P
author_sort	Liu, X
title	AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
title_short	AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
title_full	AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
title_fullStr	AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
title_full_unstemmed	AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
title_sort	algan/gan high electron mobility transistors with a low sub-threshold swing on free-standing gan wafer
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/176083
_version_	1781792233251405824

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

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