Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is reported. The ZrO2 AlGaN/GaN MISHEMTs showed improved maximum drain current densit...
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Main Authors: | , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2014
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/98351 http://hdl.handle.net/10220/18429 |
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Institution: | Nanyang Technological University |
Language: | English |