Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

• Main Authors: Anand, M. J., Ng, G. I., Arulkumaran, S., Manoj Kumar, C. M., Ranjan, K., Vicknesh, S., Foo, S. C., Syamal, B., Zhou, X.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2015
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
• 在線閱讀: https://hdl.handle.net/10356/107107; http://hdl.handle.net/10220/25288
• 機構: Nanyang Technological University

The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with dev...