High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate

• Main Authors: Arulkumaran, Subramaniam, Ranjan, K., Ng, G. I., Manoj Kumar, C. M., Vicknesh, S., Dolmanan, S. B., Tripathy, S.
• Other Authors: Temasek Laboratories
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
• Online Access: https://hdl.handle.net/10356/98599; http://hdl.handle.net/10220/25657
• Institution: Nanyang Technological University

We report for the first time high-frequency microwave noise performance on 0.17-μm T-gate In0.17Al0.83N/GaN high-electron mobility transistors (HEMTs) fabricated on Si(111). The HEMTs exhibited a maximum drain current density of 1320 mA/mm, a maximum extrinsic transconductance of 363 mS/mm, an unity...