High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate

High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate

We report for the first time high-frequency microwave noise performance on 0.17-μm T-gate In0.17Al0.83N/GaN high-electron mobility transistors (HEMTs) fabricated on Si(111). The HEMTs exhibited a maximum drain current density of 1320 mA/mm, a maximum extrinsic transconductance of 363 mS/mm, an unity...

Full description

Saved in:

Bibliographic Details
Main Authors:	Arulkumaran, Subramaniam, Ranjan, K., Ng, G. I., Manoj Kumar, C. M., Vicknesh, S., Dolmanan, S. B., Tripathy, S.
Other Authors:	Temasek Laboratories
Format:	Article
Language:	English
Published:	2015
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
Online Access:	https://hdl.handle.net/10356/98599 http://hdl.handle.net/10220/25657
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

Similar Items

Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors
by: Arulkumaran, S., et al.
Published: (2015)

InAlN/GaN high electron mobility transistors on Si for RF applications
by: Xing, Weichuan
Published: (2018)

Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate
by: Arulkumaran, Subramaniam, et al.
Published: (2013)

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
by: Anand, M. J., et al.
Published: (2015)

InAlN/GaN HEMTs on Si With High fT of 250 GHz
by: Xing, Weichuan, et al.
Published: (2020)

Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal
by: Arulkumaran, Subramaniam, et al.
Published: (2015)

Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
by: Aabdin, Zainul, et al.
Published: (2024)

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
by: Dolmanan, S. B., et al.
Published: (2013)

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon
by: Vicknesh, S., et al.
Published: (2014)

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
by: Ranjan, Kumud, et al.
Published: (2015)

Development and characterization of GaN high electron mobility transistors for low noise applications
by: Liu, Zhihong
Published: (2011)

Gold-free InAlN/GaN schottky Gate HEMT on Si(111) substrate with ZrO 2 Passivation
by: Kyaw, L.M., et al.
Published: (2014)

Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond
by: Kumud Ranjan
Published: (2020)

Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications
by: Xing, Weichuan, et al.
Published: (2018)

Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
by: Anand, M. J., et al.
Published: (2014)

Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
by: Bera, L. K., et al.
Published: (2014)

Characterizations of GaN-based high-electron-mobility-transistors (hemts)
by: Wong, Wei Jie.
Published: (2012)

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
by: Murugapandiyan, P., et al.
Published: (2020)

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy
by: Ravikiran, L., et al.
Published: (2015)

Highly sensitive gas sensor based on GaN transistor structure
by: Imran
Published: (2020)

Studies of traps in AlGaN/GaN high electron mobility transistors on silicon
by: Anand Mulagumoottil Jesudas
Published: (2016)

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy
by: Dharmarasu, Nethaji, et al.
Published: (2013)

Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation
by: Vicknesh, Sahmuganathan, et al.
Published: (2013)

STUDY OF CMOS COMPATIBLE RUTHENIUM OXIDE SCHOTTKY CONTACTS FOR ALGAN/GAN AND INALN/GAN DIODES AND HIGH MOBILITY TRANSISTORS GROWN ON SILICON (111) SUBSTRATES
by: LWIN MIN KYAW
Published: (2015)

Methodology for assessing the reliability of GaN high-electron-mobility transistors
by: Gunawan, Anton.
Published: (2012)

Gold-free contacts on Al x Ga 1-x N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate
by: Tham, Wai Hoe, et al.
Published: (2018)

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures
by: Lingaparthi, R., et al.
Published: (2021)

Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack
by: Arulkumaran, Subramaniam, et al.
Published: (2015)

Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)
by: Phia, Chen Yew
Published: (2020)

Regrown ohmic contact to GaN-based high electron mobility transistors
by: Tan, Eleen
Published: (2023)

Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency
by: Sandupatla, Abhinay, et al.
Published: (2020)

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
by: Li, Yang, et al.
Published: (2017)

Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors
by: Li, Yang, et al.
Published: (2015)

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
by: Lau, Sien Hui
Published: (2020)

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
by: Sasangka, W. A., et al.
Published: (2017)

Studies of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs)
by: Ong, Zi Kai
Published: (2020)

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
by: Ye, G., et al.
Published: (2014)

Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon
by: Li, Yang, et al.
Published: (2015)

ZrO2 as high-K gate dielectric for GaN-based transistors
by: Ye, Gang
Published: (2016)

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
by: Liu, X, et al.
Published: (2020)