Studies of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs)

• Main Author: Ong, Zi Kai
• Other Authors: Ng Geok Ing
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/140651
• Institution: Nanyang Technological University

GaN-based devices are wide bandgap semiconductor materials that are poised to supersede Si-based devices in power electronics and high frequency applications. GaN-based HEMTs have emerged as a forefront choice among other materials due to its high breakdown electric field, saturation velocity and th...