Studies of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs)

• 主要作者: Ong, Zi Kai
• 其他作者: Ng Geok Ing
• 格式: Final Year Project
• 語言: English
• 出版: Nanyang Technological University 2020
• 主題: Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: https://hdl.handle.net/10356/140651
• 機構: Nanyang Technological University

GaN-based devices are wide bandgap semiconductor materials that are poised to supersede Si-based devices in power electronics and high frequency applications. GaN-based HEMTs have emerged as a forefront choice among other materials due to its high breakdown electric field, saturation velocity and th...