Investigation of failure mechanisms for gallium nitride (GaN) based high-electron-mobility transistors (HEMTs)

• Main Author: Hu, Shihao
• Other Authors: Ng Geok Ing
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2023
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/167112
• Institution: Nanyang Technological University

This study investigates the failure mechanisms of Gallium Nitride (GaN) based high-electron-mobility transistors (HEMTs) under high electric field through reverse bias stress condition. The report presents a detailed literature review of the basic theoretical backgrounds and known failure mechanisms...