Hu, S., & Ing, N. G. (2023). Investigation of failure mechanisms for gallium nitride (GaN) based high-electron-mobility transistors (HEMTs). Nanyang Technological University.
Chicago Style CitationHu, Shihao, and Ng Geok Ing. Investigation of Failure Mechanisms for Gallium Nitride (GaN) Based High-electron-mobility Transistors (HEMTs). Nanyang Technological University, 2023.
MLA CitationHu, Shihao, and Ng Geok Ing. Investigation of Failure Mechanisms for Gallium Nitride (GaN) Based High-electron-mobility Transistors (HEMTs). Nanyang Technological University, 2023.
Warning: These citations may not always be 100% accurate.