Investigation of failure mechanisms for gallium nitride (GaN) based high-electron-mobility transistors (HEMTs)

Investigation of failure mechanisms for gallium nitride (GaN) based high-electron-mobility transistors (HEMTs)

This study investigates the failure mechanisms of Gallium Nitride (GaN) based high-electron-mobility transistors (HEMTs) under high electric field through reverse bias stress condition. The report presents a detailed literature review of the basic theoretical backgrounds and known failure mechanisms...

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書目詳細資料
主要作者:	Hu, Shihao
其他作者:	Ng Geok Ing
格式:	Final Year Project
語言:	English
出版:	Nanyang Technological University 2023
主題:	Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/167112
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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