Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)

• المؤلف الرئيسي: Phia, Chen Yew
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2020
• الموضوعات: Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/139673
• المؤسسة: Nanyang Technological University

This research presents the characterization of interface traps of GaN High-ElectronMobility Transistors (HEMT). GaN HEMT devices have shown excellent performance in many area of applications such as high power, high frequency, communication and space application. Though it is attractive for future a...