Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)

This research presents the characterization of interface traps of GaN High-ElectronMobility Transistors (HEMT). GaN HEMT devices have shown excellent performance in many area of applications such as high power, high frequency, communication and space application. Though it is attractive for future a...

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Main Author: Phia, Chen Yew
Other Authors: Ng Geok Ing
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2020
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Online Access:https://hdl.handle.net/10356/139673
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1396732023-07-07T18:34:37Z Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs) Phia, Chen Yew Ng Geok Ing School of Electrical and Electronic Engineering eging@ntu.edu.sg Engineering::Electrical and electronic engineering This research presents the characterization of interface traps of GaN High-ElectronMobility Transistors (HEMT). GaN HEMT devices have shown excellent performance in many area of applications such as high power, high frequency, communication and space application. Though it is attractive for future applications, the performance and reliability of GaN HEMT devices are still restricted by trapping effects. The trapping effects are categorized based on their location in the device structure. In this report, the interface trap states were investigated using the conductance method and the GaN HEMT device used in the experimental setup is grown using MOCVD and it is under silicon substrate. Specifically, the study of interface traps is done through analysis of interface trap density (Dit), trap energy level (ET) and trap time constant ( it) from the experiment. From the conductance method, this report have evaluated Dit range of (4.813 ~ 7.735) x 1012 cm-2 eV-1, ET range of (0.3170 ~ 0.3455) eV and it range of (1.061 ~ 3.183) µs. Additionally, DC electrical behavior (I-V) were performed for the same device to analyze the effect of interface traps. Lastly, recommendation for future research of interface traps were suggested to prompt future researchers in a good direction. Bachelor of Engineering (Electrical and Electronic Engineering) 2020-05-21T01:56:02Z 2020-05-21T01:56:02Z 2020 Final Year Project (FYP) https://hdl.handle.net/10356/139673 en P2001-171 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
spellingShingle Engineering::Electrical and electronic engineering
Phia, Chen Yew
Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)
description This research presents the characterization of interface traps of GaN High-ElectronMobility Transistors (HEMT). GaN HEMT devices have shown excellent performance in many area of applications such as high power, high frequency, communication and space application. Though it is attractive for future applications, the performance and reliability of GaN HEMT devices are still restricted by trapping effects. The trapping effects are categorized based on their location in the device structure. In this report, the interface trap states were investigated using the conductance method and the GaN HEMT device used in the experimental setup is grown using MOCVD and it is under silicon substrate. Specifically, the study of interface traps is done through analysis of interface trap density (Dit), trap energy level (ET) and trap time constant ( it) from the experiment. From the conductance method, this report have evaluated Dit range of (4.813 ~ 7.735) x 1012 cm-2 eV-1, ET range of (0.3170 ~ 0.3455) eV and it range of (1.061 ~ 3.183) µs. Additionally, DC electrical behavior (I-V) were performed for the same device to analyze the effect of interface traps. Lastly, recommendation for future research of interface traps were suggested to prompt future researchers in a good direction.
author2 Ng Geok Ing
author_facet Ng Geok Ing
Phia, Chen Yew
format Final Year Project
author Phia, Chen Yew
author_sort Phia, Chen Yew
title Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)
title_short Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)
title_full Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)
title_fullStr Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)
title_full_unstemmed Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)
title_sort studies of interface traps in gan high-electron-mobility-transistors (hemts)
publisher Nanyang Technological University
publishDate 2020
url https://hdl.handle.net/10356/139673
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