Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)

• Main Author: Phia, Chen Yew
• Other Authors: Ng Geok Ing
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/139673
• Institution: Nanyang Technological University

This research presents the characterization of interface traps of GaN High-ElectronMobility Transistors (HEMT). GaN HEMT devices have shown excellent performance in many area of applications such as high power, high frequency, communication and space application. Though it is attractive for future a...