Characterization of GaN-based HEMT structures for high power applications

• Main Author: Pang, Shi Xiang.
• Other Authors: K Radhakrishnan
• Format: Final Year Project
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/54247
• Institution: Nanyang Technological University

GaN based HEMT devices on 4 inch Si (111) were characterized to study their electrical parameters, using Hall Effect, Current-Voltage and Capacitance-Voltage measurements. Four different types of structure configurations were studied, which include different stress mitigating layers with carbon dopi...