Characterization of GaN-based HEMT structures for high power applications

• المؤلف الرئيسي: Pang, Shi Xiang.
• مؤلفون آخرون: K Radhakrishnan
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/54247
• المؤسسة: Nanyang Technological University

GaN based HEMT devices on 4 inch Si (111) were characterized to study their electrical parameters, using Hall Effect, Current-Voltage and Capacitance-Voltage measurements. Four different types of structure configurations were studied, which include different stress mitigating layers with carbon dopi...