Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)

• 主要作者: Lau, Sien Hui
• 其他作者: Ng Geok Ing
• 格式: Final Year Project
• 語言: English
• 出版: Nanyang Technological University 2020
• 主題: Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: https://hdl.handle.net/10356/141852
• 機構: Nanyang Technological University

Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator Semiconductor (GaN MISHEMT) is a well-known material since the discovery of its properties due to high thermal operations, high frequency and high power to be applied in the Microfabrication device application. Hence,...