Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)

• Main Author: Lau, Sien Hui
• Other Authors: Ng Geok Ing
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/141852
• Institution: Nanyang Technological University

Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator Semiconductor (GaN MISHEMT) is a well-known material since the discovery of its properties due to high thermal operations, high frequency and high power to be applied in the Microfabrication device application. Hence,...