Lau, S. H., & Ing, N. G. (2020). Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT). Nanyang Technological University.
استشهاد بنمط شيكاغوLau, Sien Hui, و Ng Geok Ing. Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT). Nanyang Technological University, 2020.
MLA استشهادLau, Sien Hui, و Ng Geok Ing. Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT). Nanyang Technological University, 2020.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.