Studies of GaN-on-GaN vertical Schottky diodes for radiation sensing applications

• Main Author: Sandupatla, Abhinay
• Other Authors: Ng Geok Ing
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/137398
• Institution: Nanyang Technological University

Gallium Nitride (GaN) with its large bandgap, high electron saturation velocity, and critical electric field has been widely applied in the fabrication of illumination, high frequency, and high-power devices. Recently, researchers are exploring radiation sensing as a probable application for GaN dev...