Degradation study of GaN-based high electron mobility transistors

"Moore's Law" states that the number of transistors in an integrated circuit will increase twice roughly every two years. As observed since the 1970s, the number of transistors per silicon integrated circuit doubled every 18 months, consistent with this trend. This increase in transis...

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Bibliographic Details
Main Author: Lius, Melina Novalia Jontera
Other Authors: Gan Chee Lip
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2023
Subjects:
Online Access:https://hdl.handle.net/10356/167553
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Institution: Nanyang Technological University
Language: English