Degradation study of GaN-based high electron mobility transistors

• Main Author: Lius, Melina Novalia Jontera
• Other Authors: Gan Chee Lip
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2023
• Subjects: Engineering::Materials
• Online Access: https://hdl.handle.net/10356/167553
• Institution: Nanyang Technological University

"Moore's Law" states that the number of transistors in an integrated circuit will increase twice roughly every two years. As observed since the 1970s, the number of transistors per silicon integrated circuit doubled every 18 months, consistent with this trend. This increase in transis...