Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates

• Main Authors: Aabdin, Zainul, Mahfoud, Zackaria, Razeen, Ahmed S., Hui, Hui Kim, Patil, Dharmraj K., Yuan, Gao, Ong, Jesper, Tripathy, Sudhiranjan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2024
• Subjects: Engineering; Electron energy loss spectroscopy; Electron mobility
• Online Access: https://hdl.handle.net/10356/173991
• Institution: Nanyang Technological University

Realization of high crystal quality GaN layers on silicon substrates requires a great control over epitaxy as well as detailed characterization of the buried defects and propagating dislocations within the epilayers. In this Letter, we present the microstructural characterization of AlxGa1−xN/GaN hi...