Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates

• Main Authors: Aabdin, Zainul, Mahfoud, Zackaria, Razeen, Ahmed S., Hui, Hui Kim, Patil, Dharmraj K., Yuan, Gao, Ong, Jesper, Tripathy, Sudhiranjan
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2024
• 主題: Engineering; Electron energy loss spectroscopy; Electron mobility
• 在線閱讀: https://hdl.handle.net/10356/173991

Realization of high crystal quality GaN layers on silicon substrates requires a great control over epitaxy as well as detailed characterization of the buried defects and propagating dislocations within the epilayers. In this Letter, we present the microstructural characterization of AlxGa1−xN/GaN hi...