Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

AlGaN/GaN based metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV PDs) are highly in demand for several applications that require thermal and mechanical stability, and strength to handle different environmental conditions. However, the electro-optic performance of these devices is very...

Full description

Saved in:
Bibliographic Details
Main Authors: Razeen, Ahmed S., Tang, Eric X., Yuan, Gao, Ong, Jesper, Radhakrishnan, K., Tripathy, Sudhiranjan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2024
Subjects:
Online Access:https://hdl.handle.net/10356/180260
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English