Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

AlGaN/GaN based metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV PDs) are highly in demand for several applications that require thermal and mechanical stability, and strength to handle different environmental conditions. However, the electro-optic performance of these devices is very...

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Bibliographic Details
Main Authors: Razeen, Ahmed S., Tang, Eric X., Yuan, Gao, Ong, Jesper, Radhakrishnan, K., Tripathy, Sudhiranjan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2024
Subjects:
Engineering
Superlattice
Photodetector
Online Access:https://hdl.handle.net/10356/180260
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/180260

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