Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

AlGaN/GaN based metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV PDs) are highly in demand for several applications that require thermal and mechanical stability, and strength to handle different environmental conditions. However, the electro-optic performance of these devices is very...

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Bibliographic Details
Main Authors:	Razeen, Ahmed S., Tang, Eric X., Yuan, Gao, Ong, Jesper, Radhakrishnan, K., Tripathy, Sudhiranjan
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2024
Subjects:	Engineering Superlattice Photodetector
Online Access:	https://hdl.handle.net/10356/180260
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

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