Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates
AlGaN/GaN based metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV PDs) are highly in demand for several applications that require thermal and mechanical stability, and strength to handle different environmental conditions. However, the electro-optic performance of these devices is very...
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| Main Authors: | , , , , , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
2024
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/180260 |
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