Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

10.1063/1.3633104

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Bibliographic Details
Main Authors: Liu, X., Kim Fong Low, E., Pan, J., Liu, W., Leong Teo, K., Tan, L.-S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82496
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82496

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