Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

10.1063/1.3633104

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Bibliographic Details
Main Authors:	Liu, X., Kim Fong Low, E., Pan, J., Liu, W., Leong Teo, K., Tan, L.-S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82496
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82496
record_format	dspace
spelling	sg-nus-scholar.10635-824962023-10-26T21:46:51Z Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors Liu, X. Kim Fong Low, E. Pan, J. Liu, W. Leong Teo, K. Tan, L.-S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.3633104 Applied Physics Letters 99 9 - APPLA 2014-10-07T04:30:04Z 2014-10-07T04:30:04Z 2011-08-29 Article Liu, X., Kim Fong Low, E., Pan, J., Liu, W., Leong Teo, K., Tan, L.-S., Yeo, Y.-C. (2011-08-29). Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors. Applied Physics Letters 99 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3633104 00036951 http://scholarbank.nus.edu.sg/handle/10635/82496 000294489300078 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.3633104
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, X. Kim Fong Low, E. Pan, J. Liu, W. Leong Teo, K. Tan, L.-S. Yeo, Y.-C.
format	Article
author	Liu, X. Kim Fong Low, E. Pan, J. Liu, W. Leong Teo, K. Tan, L.-S. Yeo, Y.-C.
spellingShingle	Liu, X. Kim Fong Low, E. Pan, J. Liu, W. Leong Teo, K. Tan, L.-S. Yeo, Y.-C. Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors
author_sort	Liu, X.
title	Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors
title_short	Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors
title_full	Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors
title_fullStr	Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors
title_full_unstemmed	Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors
title_sort	impact of in situ vacuum anneal and sih4 treatment on electrical characteristics of algan/gan metal-oxide-semiconductor high-electron mobility transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82496
_version_	1781784154960035840

Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

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