Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

10.1063/1.3633104

Saved in:

Bibliographic Details
Main Authors:	Liu, X., Kim Fong Low, E., Pan, J., Liu, W., Leong Teo, K., Tan, L.-S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82496
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
by: Duan, Tian Li, et al.
Published: (2019)

Studies of traps in AlGaN/GaN high electron mobility transistors on silicon
by: Anand Mulagumoottil Jesudas
Published: (2016)

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
by: Wang, H.T., et al.
Published: (2014)

Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTs
by: Huang, H., et al.
Published: (2014)

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
by: Liu, X, et al.
Published: (2020)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
by: Ju, Zhen Gang, et al.
Published: (2016)

On-state reliability study of AlGaN/GaN high electron mobility transistor on silicon
by: Syaranamual, Govindo Joannesha
Published: (2018)

Electronic structures of AlGaN2 nanotubes and AlN-GaN nanotube superlattice
by: Pan, H., et al.
Published: (2014)

Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
by: Chang, T.-F., et al.
Published: (2016)

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating
by: Liu X., et al.
Published: (2020)

Material characterization of AlGaN/GaN based HEMT structures
by: Nur Hidayat Bin Hatwi
Published: (2014)

Comments on "thermal resistance calculation of AlGaN-GaN devices"
by: Yin, W.-Y., et al.
Published: (2014)

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
by: Li, Yang, et al.
Published: (2017)

The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
by: Liu, W., et al.
Published: (2014)

The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
by: Liu, W., et al.
Published: (2014)

Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond
by: Kumud Ranjan
Published: (2020)

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
by: Gao, Yu, et al.
Published: (2019)

In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications
by: Lingaparthi, R., et al.
Published: (2021)

Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
by: LIU XINKE
Published: (2013)

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures
by: Whiteside, Matthew David
Published: (2021)

Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation
by: Liu, C., et al.
Published: (2014)

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy
by: Ravikiran, L., et al.
Published: (2015)

The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs
by: Yuan, Li, et al.
Published: (2013)

AlGaN/GaN HEMT based gas sensor characterisation and measurement
by: Ng, Ting Siang
Published: (2018)

Investigation of Rh-based Schottky electrode on AlGaN/GaN heterostructure
by: Tian, F., et al.
Published: (2014)

Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics
by: Liu, X., et al.
Published: (2014)

Pulsed current-voltage characteristics of AlGaN/GaN high-electron-mobility-transistors on HR-Si substrate
by: Lee, Wei Yi.
Published: (2009)

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
by: Qian, Haisheng, et al.
Published: (2020)

Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure
by: Hou, Yong Tian, et al.
Published: (2014)

Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure
by: Hou, Yong Tian, et al.
Published: (2014)

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
by: Ye, G., et al.
Published: (2014)

Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates
by: Razeen, Ahmed S., et al.
Published: (2024)

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon
by: Vicknesh, S., et al.
Published: (2014)

AlGaN/GaN power HEMT devices for future energy conversion applications
by: Liang, Y.C., et al.
Published: (2014)

Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon
by: Dror, Ben, et al.
Published: (2021)

Characterization and analysis of AlGaN/GaN HEMTs on Si for high frequency application
by: Pang, Vanessa Du Juan
Published: (2017)

Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
by: Wang, Y.-H., et al.
Published: (2014)

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
by: Ahmed Salah Hawash Razeen
Published: (2024)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
by: Liu, Siyu, et al.
Published: (2024)

Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
by: Agrawal, M., et al.
Published: (2011)