Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structures

Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structures

10.1149/2.0131711jss

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Bibliographic Details
Main Authors: Chang, T.-F, Chang, C.-Y, Huang, C.-F, Liang, Y.C, Samudra, G.S, Lin, R.-M
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Editorial
Published: Electrochemical Society 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/183553
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/183553

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