Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures

بواسطة Huang, H., Liang, Y.C., Samudra, G.S., Huang, C.-F.
منشور في 2014

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs

بواسطة Huang, H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F.
منشور في 2014

AlGaN/GaN power HEMT devices for future energy conversion applications

بواسطة Liang, Y.C., Samudra, G.S., Huang, H., Huang, C.-F., Chang, T.-F.
منشور في 2014

An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes

بواسطة Chang, C.-Y., Li, Y.-C., Ren, K., Liang, Yung C., Huang, C.-F.
منشور في 2021

Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structures

بواسطة Chang, T.-F, Chang, C.-Y, Huang, C.-F, Liang, Y.C, Samudra, G.S, Lin, R.-M
منشور في 2020

Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs

بواسطة Chang, T.-F., Hsiao, T.-C., Huang, C.-F., Kuo, W.-H., Lin, S.-F., Samudra, G.S., Liang Y.C.
منشور في 2016

Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices

بواسطة Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q.
منشور في 2014

Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

بواسطة Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q.
منشور في 2014