Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

10.1088/0268-1242/28/12/125010

Saved in:
書目詳細資料
Main Authors: Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Article
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/82715
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!