Modelling of temperature dependence on current collapse phenomenon in AlGaN/GaN HEMT devices

Modelling of temperature dependence on current collapse phenomenon in AlGaN/GaN HEMT devices

10.1109/WiPDA.2013.6695581

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Bibliographic Details
Main Authors: Samudra, G.S., Liang, Y.C., Li, Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83970
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83970

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