Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

10.1088/0268-1242/28/12/125010

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Bibliographic Details
Main Authors:	Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82715
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Institution:	National University of Singapore

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