Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
10.1088/0268-1242/28/12/125010
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sg-nus-scholar.10635-827152023-10-29T22:28:13Z Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics Wang, Y.-H. Liang, Y.C. Samudra, G.S. Chang, T.-F. Huang, C.-F. Yuan, L. Lo, G.-Q. ELECTRICAL & COMPUTER ENGINEERING 10.1088/0268-1242/28/12/125010 Semiconductor Science and Technology 28 12 - SSTEE 2014-10-07T04:32:39Z 2014-10-07T04:32:39Z 2013-12 Article Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q. (2013-12). Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics. Semiconductor Science and Technology 28 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/28/12/125010 02681242 http://scholarbank.nus.edu.sg/handle/10635/82715 000327467300016 Scopus |
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10.1088/0268-1242/28/12/125010 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Wang, Y.-H. Liang, Y.C. Samudra, G.S. Chang, T.-F. Huang, C.-F. Yuan, L. Lo, G.-Q. |
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Article |
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Wang, Y.-H. Liang, Y.C. Samudra, G.S. Chang, T.-F. Huang, C.-F. Yuan, L. Lo, G.-Q. |
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Wang, Y.-H. Liang, Y.C. Samudra, G.S. Chang, T.-F. Huang, C.-F. Yuan, L. Lo, G.-Q. Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics |
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Wang, Y.-H. |
title |
Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics |
title_short |
Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics |
title_full |
Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics |
title_fullStr |
Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics |
title_full_unstemmed |
Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics |
title_sort |
modelling temperature dependence on algan/gan power hemt device characteristics |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/82715 |
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