Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

10.1088/0268-1242/28/12/125010

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Bibliographic Details
Main Authors: Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82715
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-827152023-10-29T22:28:13Z Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics Wang, Y.-H. Liang, Y.C. Samudra, G.S. Chang, T.-F. Huang, C.-F. Yuan, L. Lo, G.-Q. ELECTRICAL & COMPUTER ENGINEERING 10.1088/0268-1242/28/12/125010 Semiconductor Science and Technology 28 12 - SSTEE 2014-10-07T04:32:39Z 2014-10-07T04:32:39Z 2013-12 Article Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q. (2013-12). Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics. Semiconductor Science and Technology 28 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/28/12/125010 02681242 http://scholarbank.nus.edu.sg/handle/10635/82715 000327467300016 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1088/0268-1242/28/12/125010
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Wang, Y.-H.
Liang, Y.C.
Samudra, G.S.
Chang, T.-F.
Huang, C.-F.
Yuan, L.
Lo, G.-Q.
format Article
author Wang, Y.-H.
Liang, Y.C.
Samudra, G.S.
Chang, T.-F.
Huang, C.-F.
Yuan, L.
Lo, G.-Q.
spellingShingle Wang, Y.-H.
Liang, Y.C.
Samudra, G.S.
Chang, T.-F.
Huang, C.-F.
Yuan, L.
Lo, G.-Q.
Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
author_sort Wang, Y.-H.
title Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
title_short Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
title_full Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
title_fullStr Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
title_full_unstemmed Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
title_sort modelling temperature dependence on algan/gan power hemt device characteristics
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82715
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