Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structures
10.1149/2.0131711jss
Saved in:
Main Authors: | Chang, T.-F, Chang, C.-Y, Huang, C.-F, Liang, Y.C, Samudra, G.S, Lin, R.-M |
---|---|
其他作者: | ELECTRICAL AND COMPUTER ENGINEERING |
格式: | Editorial |
出版: |
Electrochemical Society
2020
|
在線閱讀: | https://scholarbank.nus.edu.sg/handle/10635/183553 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
由: Chang, T.-F., et al.
出版: (2016) -
AlGaN/GaN power HEMT devices for future energy conversion applications
由: Liang, Y.C., et al.
出版: (2014) -
Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
由: Wang, Y.-H., et al.
出版: (2014) -
Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTs
由: Huang, H., et al.
出版: (2014) -
Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
由: Huang, H., et al.
出版: (2014)