Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics

Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics

10.1063/1.3584856

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Bibliographic Details
Main Authors: Liu, X., Liu, B., Low, E.K.F., Liu, W., Yang, M., Tan, L.-S., Teo, K.L., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56512
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56512

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