Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
US20090001416A1
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Patent |
| Published: |
2012
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/34940 |
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| Institution: | National University of Singapore |