Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)

US20090001416A1

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: CHUA, SOO JIN, HARTONO, HARYONO, SOH, CHEW BENG
مؤلفون آخرون: ELECTRICAL & COMPUTER ENGINEERING
التنسيق: Patent
منشور في: 2012
الوصول للمادة أونلاين:http://scholarbank.nus.edu.sg/handle/10635/34940
الوسوم: إضافة وسم
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المؤسسة: National University of Singapore
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spelling sg-nus-scholar.10635-349402024-11-15T02:14:22Z Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD) CHUA, SOO JIN HARTONO, HARYONO SOH, CHEW BENG ELECTRICAL & COMPUTER ENGINEERING SINGAPORE-MIT ALLIANCE NATIONAL UNIVERSITY OF SINGAPORE US20090001416A1 Published Application 2012-10-08T08:23:03Z 2012-10-08T08:23:03Z 2009-01-01 Patent CHUA, SOO JIN,HARTONO, HARYONO,SOH, CHEW BENG (2009-01-01). Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD). ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/34940 NOT_IN_WOS PatSnap
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description US20090001416A1
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
CHUA, SOO JIN
HARTONO, HARYONO
SOH, CHEW BENG
format Patent
author CHUA, SOO JIN
HARTONO, HARYONO
SOH, CHEW BENG
spellingShingle CHUA, SOO JIN
HARTONO, HARYONO
SOH, CHEW BENG
Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
author_sort CHUA, SOO JIN
title Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
title_short Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
title_full Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
title_fullStr Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
title_full_unstemmed Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
title_sort growth of indium gallium nitride (ingan) on porous gallium nitride (gan) template by metal-organic chemical vapor deposition (mocvd)
publishDate 2012
url http://scholarbank.nus.edu.sg/handle/10635/34940
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