Studies of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs)

• المؤلف الرئيسي: Ong, Zi Kai
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2020
• الموضوعات: Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/140651

GaN-based devices are wide bandgap semiconductor materials that are poised to supersede Si-based devices in power electronics and high frequency applications. GaN-based HEMTs have emerged as a forefront choice among other materials due to its high breakdown electric field, saturation velocity and th...