Ong, Z. K., & Ing, N. G. (2020). Studies of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs). Nanyang Technological University.
استشهاد بنمط شيكاغوOng, Zi Kai, و Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistors (HEMTs). Nanyang Technological University, 2020.
MLA استشهادOng, Zi Kai, و Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistors (HEMTs). Nanyang Technological University, 2020.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.