Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal

• Main Authors: Arulkumaran, Subramaniam, Ng, Geok Ing, Ranjan, Kumud, Kumar, Chandra Mohan Manoj, Foo, Siew Chuen, Ang, Kian Siong, Vicknesh, Sahmuganathan, Dolmanan, Surani Bin, Bhat, Thirumaleshwara, Tripathy, Sudhiranjan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Published: 2015
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/79402; http://hdl.handle.net/10220/25337
• Institution: Nanyang Technological University

We have demonstrated 0.17-µm gate-length In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) on Si(111) substrates using a non-gold metal stack (Ta/Si/Ti/Al/Ni/Ta) with a record-low ohmic contact resistance (Rc) of 0.36 Ω mm. This contact resistance is comparable to the conventional gold-ba...